Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes
نویسندگان
چکیده
High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are desirable for future high-resolution displays and lighting products. Here, we demonstrate efficient (∼570 nm) LEDs optimized three-layer staggered quantum wells (QWs) that grown on patterned sapphire substrates. Numerical simulations show the electron–hole wavefunction overlap of InGaN QWs In content exhibits a 1.7-fold improvement over square QWs. At same injection current, exhibit lower forward voltages narrower full widths at half maximum than The light output power external efficiency QW LED 10.2 mW 30.8%, respectively, 15 mA. We combine atomic probe tomography (APT), time-resolved photoluminescence (TRPL), transmission electron microscopy (TEM) energy-dispersive x-ray (EDX) mapping spectroscopy to shed origin enhanced device performance. APT results confirm profile our designed structure, TRPL reveal decreased defect-state carrier trapping in Furthermore, TEM EDX supports viewpoint uniform elemental distribution improved crystal quality. Together, these factors above contribute Our study shows provide promising strategy development long-wavelength region.
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Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2021
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0043240